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ModuleInformation

ELE8056

Electronics of Solid State Devices

Course Contents

Analysis of the bipolar transistor with non-uniform base dopant, gain, cut-off frequency, early voltage, high level injection operation. P-I-n diode for high voltage applications, forward voltage drop.
Field effect diode operation and open base breakdown voltage.
Analysis of the MOS transistor, threshold voltage control, body effect, channel length modulation.
SPICE model for MOSTs.
Scaling down the MOST.
Short and narrow channel effects.
Latch up in CMOS, SOI for CMOS.
Power MOS devices.

Supplementary Notes

None

Learning Outcomes

  • To provide a knowledge base in the internal electronics of silicon devices that will enable students to understand all silicon based devices.
  • Students will be introduced to real rather than idealised devices.
  • Students will become aware of the major application areas of silicon devices and the key parameters which control their performance.
  • The limitations of current devices and potential future innovative devices will be established.

Skills

Assimilation of lecture material and application of the knowledge gained to current and new devices.

Development of an understanding of the impact of the theories developed on the real world of silicon integrated circuits.