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EPSRC Studentship available at CNM

An EPSRC studentship titled '2D Ferroelectricity and Bloch lines: The hunt begins' is available under the mentorship of Dr. A. Kumar and Prof. JM Gregg.

Link on FindAPhD :
To apply, click here :

For further information about the project, please contact  Dr. Kumar ( ) or Prof. Gregg (

Post-Graduate Taught courses offered by CNM

The School of Mathematics and Physics at Queen’s University Belfast presents a range of new web-based, taught modules in Materials Science for Innovative Engineering. The modules can be taken individually or can be combined to form the basis of a Master of Science (MSc), Postgraduate Diploma (PG Dip) and Postgraduate Certificate (PG Cert) in  Materials Science for Innovative Engineering. The course is part-time and specifically designed for those in full time employment. As such it does not require attendance at Queen’s University Belfast. However, for students interested in practical experimental experience a residential option is offered for the Materials Science Case Study module in the second semester.

For further information, please contact the programme coordinator Dr Solveig Felton on

CNM Research makes cover of Advanced Materials

The prestigious journal of Advanced Materials has recognised the work carried out by Jonny Whyte, Raymond McQuaid and Marty Gregg et al on “Ferroelectric domain wall injection” by awarding it a position on the back cover of their latest issue (Vol. 26, Iss. 2). Results displayed in this work showed that ferroelectric domain wall nucleation and position could be controlled by introducing electric field heterogeneity in a ferroelectric capacitor structure. This heterogeneity was introduced by using a focused ion beam to mill shaped holes into the ferroelectric, where localised electric field enhancements would inject new domain wall pairs and give them enhanced mobility, whereas field denudations would pin domain walls in their position. Being able to engineer the electric field in this way opens up a new paradigm for controlling domain walls and brings novel nanoelectronic components such as domain wall transistors and memristors one step closer to reality.