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Dr. David McNeill
Senior Lecturer 		Publications
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E-mail: dw dot mcneill at qub dot ac dot uk
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All Publications

 

Journal Paper

  1. Cordeiro, S., Tekko, I., Jomaa, M. H., Vora, L., McAlister, E., Volpe Zanutto, F., Nethery, M., Baine, P., Mitchell, N., McNeill, D. & Donnelly, R., Two-Photon Polymerisation 3D Printing of Microneedle Array Templates with Versatile Designs: Application in the Development of Polymeric Drug Delivery Systems (2020), Pharmaceutical Research , Vol. 37, 2020

  2. Zainal, N., Mitchell, N., McNeill, D. & Jubadi, W. M., Development of photodiode via the rapid melt growth (RMG) materials for energy conversion device (2019), Indonesian Journal of Electrical Engineering and Computer Science , Vol. 18, 2019, (pp1188-1198)

  3. Budania, P., Baine, P. T., Montgomery, J. H., McNeill, D. W., Mitchell, S. J., Modreanu, M. & Hurley, P. K., Comparison between Scotch tape and gel-assisted mechanical exfoliation techniques for preparation of 2D transition metal dichalcogenide flakes (2017), Micro and Nano Letters , Vol. 12, 2017, (pp970-973)

  4. Budania, P., Baine, P. T., Montgomery, J. H., McNeill, D. W., Mitchell, S. J. N., Modreanu, M. & Hurley, P. K., Effect of post-exfoliation treatments on mechanically exfoliated MoS2 (2017), Materials Research Express , Vol. 4, 2017

  5. Zainal, N., Mitchell, S. J. & McNeill, D. W., Hafnium dioxide (HfO2) as micro-crucible liner on GeOI for rapid melt growth (RMG) structure (2016), Journal of Telecommunication, Electronic and Computer Engineering , Vol. 9, 2016, (pp137-140)

  6. Chauhan, L., Gajula, D. R., McNeill, D. & Hughes, G., High temperature thermal stability studies of ultrathin Al2O3 layers deposited on native oxide and sulphur passivated InGaAs surfaces (2015), Microelectronic Engineering , Vol. 147, 2015, (pp249-253)

  7. Chauhan, L., Gajula, D. R., McNeill, D. & Hughes, G., High temperature thermal stability investigations of ammonium sulphide passivated InGaAs and interface formation with Al2O3 studied by synchrotron radiation based photoemission (2014), Applied Surface Science , Vol. 317, 2014, (pp696-700)

  8. Chellappan, R. K., Gajula, D. R., McNeill, D. & Hughes, G., High-temperature stability study of 1 nm Al2O3 deposited on InAs surfaces investigated by synchrotron radiation based photoemission spectroscopy (2014), Journal of Physics D: Applied Physics , Vol. 47, 2014

  9. Gajula, D., Baine, P., Modreanu, M., Hurley, P., Armstrong, B. & McNeill, D., Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers (2014), Applied Physics Letters , Vol. 104, 2014

  10. Chellappan, R. K., Gajula, D. R., McNeill, D. & Hughes, G., High temperature thermal stability of the HfO2/Ge (100) interface as a function of surface preparation studied by synchrotron radiation core level photo emission (2013), Applied Surface Science , Vol. 292, 2013, (pp345-349)

  11. Murad, S. N. A., Baine, P. T., McNeill, D. W., Mitchell, N., Armstrong, B. M., Modreanu, M., Hughes, G. & Chellappan, R. K., Optimisation and scaling of interfacial GeO2 layers for high-k gate stacks on germanium and extraction of dielectric constant of GeO2 (2012), SOLID-STATE ELECTRONICS , Vol. 78, 2012, (pp136-140)

  12. Zainal, N., Mitchell, N., McNeill, D., Bain, M., Armstrong, M., Baine, P., Adley, D. & Perova, T., Characterization of Rapid Melt Growth (RMG) Process for High Quality Thin Film Germanium on Insulator (2012), ECS Transactions , Vol. 45, 2012, (pp169-180)

  13. Murad, S., Baine, P., Montgomery, J., McNeill, D., Mitchell, N., Armstrong, M. & Modreanu, M., Electrical and Optical Characterization of GeON Layers with High-? Gate Stacks on Germanium for Future MOSFETs (2012), ECS Transactions , Vol. 45, 2012, (pp137-144)

  14. Wasyluk, J., Rainey, P., Perova, T., Mitchell, N., McNeill, D., Gamble, H., Armstrong, M. & Hurley, R., Investigation of stress and structural damage in H and He implanted Ge using micro-Raman mapping technique on bevelled samples (2012), Journal of Raman Spectroscopy , Vol. 43, 2012, (pp448-454)

  15. Perova, T., Armstrong, M., Wasyluk, J., Baine, P., Rainey, P., Mitchell, N., McNeill, D., Gamble, H. & Hurley, R., Investigation of germanium implanted with hydrogen for layer transfer applications (2011), Solid State Phenomena , Vol. 178-179, 2011, (pp295-300)

  16. Gajula, D. R., McNeill, D., Baine, P., Fleming, P., Duffy, R. & Armstrong, B. M., Characterization of Nickel Germanide Schottky Contacts for the Fabrication of Germanium p-channel MOSFETs (2011), ECS Transactions , Vol. 35, 2011, (pp521-527)

  17. Rainey, P., Wasyluk, J., Perova, T., Hurley, R., Mitchell, N., McNeill, D., Gamble, H. & Armstrong, M., Micro-Raman and Spreading Resistance Analysis on Beveled Implanted Germanium for Layer Transfer Applications (2011), Electrochemical and Solid-State Letters , Vol. 14(2), 2011, (ppH69-H72)

  18. Tantraviwat, D., Low, Y., Baine, P., Mitchell, N., McNeill, D., Armstrong, M. & Gamble, H., Electrical characterization of ALD Al2O3 and HfO2 films on germanium (2010), ECS Transactions , Vol. 28, 2010, (pp201-207)

  19. Gamble, H., Baine, P. B., Low, Y. H., Rainey, P. V., Montgomery, J. H., Bain, M. F. ., Armstrong, B. M., McNeill, D. W. & Mitchell, N. S., (Invited) Germanium on Sapphire Technology (2010), ECS Transactions , Vol. 33, 2010, (pp37-50)

  20. Gamble, H., Baine, P., Low, Y., Rainey, P., Montgomery, J., Armstrong, M., McNeill, D. & Mitchell, N., Germanium on Sapphire Technology (2010), ECS Transactions , Vol. 33(11), 2010, (pp37-50)

  21. Armstrong, M., Gamble, H., Armstrong, A. & McNeill, D., Design, Manufacture and Performance of Germanium Bipolar Transistors (2010), ECS Transactions , Vol. 33(6), 2010, (pp181-189)

  22. Low, Y., Rainey, P., Hurley, R., Baine, P., McNeill, D., Mitchell, N., Gamble, H. & Armstrong, M., Hydrogen implantation in germanium (2010), ECS Transactions , Vol. 28(1), 2010, (pp375-383)

  23. Armstrong, M., Baine, P., Montgomery, J., McNeill, D., Gamble, H. & Bain, M., Dopant Transport in Tungsten Silicide Buried Layers for Application in SSOI (2010), ECS Transactions , Vol. 28(1), 2010, (pp331-341)

  24. Low, Y., Rainey, P., Baine, P., Montgomery, J., McNeill, D., Mitchell, N., Gamble, H. & Armstrong, M., Application of atmospheric plasma for low temperature wafer bonding (2010), ECS Transactions , Vol. 28(1), 2010, (pp385-393)

  25. Low, Y., Tantraviwat, D., Rainey, P., Baine, P., McNeill, D., Mitchell, N., Armstrong, M. & Gamble, H., Carrier mobility variations in self-aligned germanium MOS transistors (2010), ECS Transactions , Vol. 28(1), 2010, (pp43-49)

  26. Liao, S., Bain, M., Baine, P., McNeill, D., Armstrong, M. & Gamble, H., Long-Range Lateral Dopant Diffusion in Tungsten Silicide Layers (2009), IEEE Transactions on Semiconductor Manufacturing , Vol. 22, 2009, (pp80-87)

  27. Baine, P., Gamble, H., Armstrong, M., Mitchell, N., McNeill, D., Rainey, P., Low, Y. & Bain, M., Germanium bonding to AI2O3 (2008), ECS Transactions , Vol. 16, 2008, (pp407-414)

  28. Baine, P., Gamble, H., Armstrong, M., McNeill, D., Mitchell, N., Low, Y. & Rainey, P., Germanium on Sapphire By Wafer Bonding (2008), Solid State Electronics , Vol. 52, 2008, (pp1840-1844)

  29. Gamble, H., Baine, P., Wadsworth, H., Low, Y., Rainey, P., Ruddell, F., Armstrong, M., McNeill, D. & Mitchell, N., Germanium on sapphire (2008), International Journal of High Speed Electronics and Systems , Vol. 18, 2008, (pp805-814)

  30. Gamble, H., Armstrong, M., Baine, P., Low, Y., McNeill, D., Mitchell, N., Montgomery, J. & Ruddell, F., Germanium on sapphire substrates for system-on-a-chip (2008), Materials Science in Semiconductor Processing , Vol. 11(5), 2008, (pp195-198)

  31. McNeill, D., Bhattacharya, S., Wadsworth, H., Ruddell, F., Mitchell, N., Armstrong, M. & Gamble, H., Atomic layer deposition of hafnium oxide dielectrics on silicon and germanium substrates (2008), Journal of Materials Science: Materials in Electronics , Vol. 19, 2008, (pp119-123)

  32. Baine, P., Bain, M., McNeill, D., Gamble, H. & Armstrong, M., Low Temperature Bonding of PECVD Silicon Dioxide Layers (2006), ECS Transactions , Vol. 3(6), 2006, (pp165-173)

  33. Wadsworth, H., Bhattacharya, S., McNeill, D., Ruddell, F., Armstrong, M., Gamble, H. & Denvir, D., Germanium MOS Capacitors with Hafnium Dioxide and Silicon Dioxide Dielectrics (2006), Materials Science in Semiconductor Processing , Vol. 9, 2006, (pp685-689)

  34. Wadsworth, H., Bhattacharya, S., Ruddell, F., McNeill, D., Mitchell, N., Armstrong, B., Gamble, H. & Denvir, D., Low temperature surface nitridation processes for dielectric-Ge interfaces (2006), ECS Transactions , Vol. 3, 2006, (pp531-537)

  35. Toh, B., McNeill, D. & Gamble, H., Investigation of copper layers deposited by CVD using Cu(I)hfac(TMVS) precursor (2005), Journal of Materials Science: Materials in Electronics , Vol. 16(7), 2005, (pp437-443)

  36. Toh, B., McNeill, D. & Gamble, H., Characterisation of copper inductors fabricated by dual damascene and electroplating techniques (2005), Journal of Materials Science: Materials in Electronics , Vol. 16(4), 2005, (pp233-238)

  37. Bain, M., Jin, M., Loh, S., Armstrong, M., Gamble, H. & McNeill, D., Electrical Characterisation of SOI Substrates Incorporating WSix Ground Planes (2005), IEEE Electron Device Letters , Vol. 26, 2005, (pp72-74)

  38. Srinivasan, G., Bain, M., Bhattacharya, S., Baine, P., Armstrong, M., Gamble, H. & McNeill, D., Tungsten Silicide Contacts to Polycrystalline Silicon and Silicon-Germanium Alloys (2004), Materials Science and Engineering B , Vol. 114-115, 2004, (pp223-227)

  39. McNally, P., Kanatharana, J., Toh, B., McNeill, D., Danilewsky, A., Tuomi, T., Knuuttila, L., Riikonen, J., Toivonen, J. & Simon, R., Geometric linewidth and the impact of thermal processing on the stress regimes induced by electroless copper metallization for Si integrated circuit interconnect technology (2004), Journal of Applied Physics , Vol. 96(12), 2004, (pp7596-7602)

  40. McNally, P., Kanatharana, J., Toh, B., McNeill, D., Tuomi, T., Danilewsky, A., Knuuttila, L., Riikonen, J. & Toivonen, J., Comparison of induced stresses due to electroless versus sputtered copper interconnect technology (2004), Semiconductor Science and Technology , Vol. 19(11), 2004, (pp1280-1284)

  41. Toh, B., McCusker, N., McNeill, D., Gamble, H. & Len, V., Surface electromigration of sputtered copper patterned using ion milling or chemical mechanical polishing (2001), Journal of Materials Science: Materials in Electronics , Vol. 12(4-6), 2001, (pp307-312)

  42. Gamble, H., Armstrong, M., Baine, P., Bain, M. & McNeill, D., Silicon-on-insulator substrates with buried tungsten silicide layer (2001), Solid State Electronics , Vol. 45(4), 2001, (pp551-557)

  43. Len, V., Hurley, R., McCusker, N., McNeill, D., Armstrong, M. & Gamble, H., An investigation into the performance of diffusion barrier materials against copper diffusion using metal-oxide-semiconductor (MOS) capacitor structures (1999), Solid State Electronics , Vol. 43(6), 1999, (pp1045-1049)

  44. Cairns, G., McNeill, D. & Dawson, P., Application of surface plasmon polaritons in the laser ablation and characterisation of thin aluminium films (1999), Surface Science , Vol. 429, 1999, (pp117-126)

  45. McNeill, D., Morrow, T. & Dawson, P., Contrasting damage characteristics in direct incidence and surface plasmon mediated single-shot laser ablation of aluminium films (1998), Applied Surface Science , Vol. 127, 1998, (pp46-52)

  46. Campbell, P., Walmsley, D., Chong, R., Gay, D., Gamble, H. & McNeill, D., The effect of germane variation on microstructure in polycrystalline Si/SiGe thin films grown by rapid thermal chemical vapour deposition: fractal characterisation using scanning probe microscopy (1998), Applied Physics A - Materials Science & Processing , Vol. 66(1-2), 1998, (ppS1067-S1071)

  47. Ray, S., McNeill, D., Gay, D., Maiti, C., Armstrong, A., Armstrong, M. & Gamble, H., Comparison of Si1-yCy films produced by solid-phase epitaxy and rapid thermal chemical vapour deposition (1997), Thin Solid Films , Vol. 294(1-2), 1997, (pp149-152)

  48. Montgomery, J., Ruddell, F., McNeill, D., Armstrong, M. & Gamble, H., A rapid thermal processing system for the deposition of silicon carbide layers on silicon (1996), International Journal of Materials & Product Technology , Vol. 11(1-2), 1996, (pp166-177)

  49. Montgomery, J., Ruddell, F., McNeill, D., Armstrong, M. & Gamble, H., Novel materials for the semiconductor industry, deposited using a rapid thermal chemical vapour deposition system (1992), Journal of Materials Processing Technology , Vol. 33(4), 1992, (pp481-492)

  50. McNeill, D., Liang, Y., Montgomery, J., Gamble, H. & Armstrong, M., Epitaxial silicon growth by rapid thermal CVD (1991), Journal De Physique Iv , Vol. 1(C2), 1991, (pp779-786)

  51. Sands, D., Brunson, K., Spink, D., Thomas, C., McNeill, D., McDonald, A., Jennings, S. & Rosser, P., Growth of wide band gap polycrystalline semi-insulating polycrystalline silicon (1990), Journal of Vacuum Science & Technology B (microelectronics Processing & Phenomena) , Vol. 8(1), 1990, (pp16-20)


Book Chapter

  1. Gamble, H., Armstrong, M., Baine, P., Low, Y., Rainey, P., Mitchell, N. & McNeill, D., Germanium Processing (2011), Semiconductor-On-Insulator Materials for Nanoelectronics Applications, , 2011, (pp3-29)


Patent

  1. Armstrong, M., Gamble, H., McNeill, D. & Mitchell, N., IC SUBSTRATE AND METHOD OF MANUFACTURE (2007), Patent Number: Patent Application PCT/GB2007/002281 2007


Conference Paper

  1. Zainal, N., Mitchell, N., McNeill, D. & Jubadi, W. M., Development of photodiode via the Rapid Melt Growth (RMG) materials for energy conversion device (2019), International Conference on Electrical and Electronics Engineering 2019 , Jun 2019

  2. Zainal, N., Mitchell, S. J. N. & McNeill, D. W., Electrical characterisation of PVD germanium resistors with rapid melt growth (RMG) process (2018), AIP Conference Proceedings , Mar 2018

  3. Budania, P., McNeill, D., Mitchell, N., Modreanu, M. & Hurley, P., Long-term stability of mechanically exfoliated MoS2 flakes (2017), 2017 MRS Spring Meeting , 2017

  4. Tan, T. H. ., Mitchell, S. J. N., McNeill, D. W., Wadsworth, H., Strahan, S. & Bailie, I., Medium Doped Non-Suspended Silicon Nanowire Piezoresistor using SIMOX substrate (2016), International Conference on Advances in Electrical, Electronic and Systems Engineering ICAEESE , Nov 2016, (pp189-193)

  5. Budania, P., Mitchell, N. & McNeill, D., Post-exfoliation annealing and ultrasonic treatment on mechanically exfoliated MoS2 (2016), EGF 2016 , Jun 2016

  6. Budania, P., Mitchell, N. & McNeill, D., Effect of Post-Exfoliation Treatments on Mechanically Exfoliated MoS2 (2016), GM-2016 , May 2016

  7. Tan, T. H., Mitchell, N., McNeill, D., Wadsworth, H. & Strahan, S., A Computational Approach for Simulating P-type Silicon Piezoresistor Using Four Point Bending Setup (2013), Proceedings of 2013 COMSOL Conference , 2013

  8. Perova, T., Zainal, N., Adley, D., Mitchell, N., McNeill, D., Bain, M., Armstrong, M. & Baine, P., Investigation of crystalline quality and stress in germanium stripes fabricated by rapid melt growth process (2012), Silicon 2012 , Jul 2012

  9. Murad, S., McNeill, D., Mitchell, N., Armstrong, M., Modreanu, M., Hughes, G. & Chellappan, R., Optimisation and scaling of interfacial GeO2 layers for high-k gate stacks on germanium and extraction of dielectric constant of GeO2 (2011), Intl Semiconductor Device Research Symp , Dec 2011

  10. Litvin, A., Adley, D., Perova, T., Zainal, N., Mitchell, N., McNeill, D., Bain, M., Armstrong, M. & Baine, P., Investigation of crystalline quality and stress in Germanium-On-Insulator layers (2011), 35th Annual Symposium of Microscopical Society of Ireland , Aug 2011, (pp62-62)

  11. Zainal, N., Mitchell, N., McNeill, D., Bain, M., Armstrong, M., Baine, P., Adley, D. & Perova, T., High quality thin-film Ge on insulator by Rapid Melt Growth (2011), UK Semiconductors , Jul 2011, (pp1-1)

  12. Low, Y., Rainey, P., Baine, P., Montgomery, J., Mitchell, N., McNeill, D., Gamble, H. & Armstrong, M., Atmospheric-pressure plasma activation for low temperature bonding (2010), 218th ECS Meeting, Semiconductor Wafer Bonding: Science, Technology & Applications , Oct 2010, (pp0-0)

  13. Baine, P., Low, Y., Rainey, P., Gamble, H., Armstrong, M., Mitchell, N. & McNeill, D., Circular geometry transistors fabricated on germanium-on-alumina bonded substrates (2010), 218th ECS Meeting, Semiconductor Wafer Bonding: Science, Technology & Applications , Oct 2010, (pp0-0)

  14. Wasyluk, J., Rainey, P., Perova, T., Hurley, R., Mitchell, N., McNeill, D., Gamble, H. & Armstrong, M., Raman mapping analysis of structural damage in ion implanted bevelled Ge samples with application in smart cut technology (2010), Joint Microscopical Society of Ireland and Northern Ireland Biomedical Engineering Society Annual Symposium , Aug 2010, (pp0-0)

  15. Low, Y., Gamble, H., Armstrong, M., Rainey, P., Baine, P., Montgomery, J., Mitchell, N. & McNeill, D., Surface activation treatment using atmospheric pressure plasma for low temeprature direct wafer bonding (2010), UK-Malaysia-Ireland Engineering Science Conference, UMIES 2010 , Jun 2010, (pp0-0)

  16. Hurley, R., Rainey, P., Low, Y., Baine, P., McNeill, D., Mitchell, N., Gamble, H. & Armstrong, M., Hydrogen and helium implantation in germanium for semiconductor layer transfer applications (2010), VIII-th INTERNATIONAL CONFERENCE on ION IMPLANTATION AND OTHER APPLICATIONS OF IONS AND ELECTRONS , Jun 2010, (pp56-56)

  17. Tantraviwat, D., Low, Y., Baine, P., Mitchell, N., McNeill, D., Armstrong, M. & Gamble, H., Electrical characterisation of ALD Al2O3 and HfO2 films on germanium (2009), Materials Ireland Conference , Dec 2009, (pp0-0)

  18. Liao, S., Bain, M., Baine, P., Montgomery, J., McNeill, D., Armstrong, M. & Gamble, H., Dopant transport in tungsten silicide layers for application in SOI technology (2009), Materials Ireland Conference , Dec 2009, (pp0-0)

  19. Low, Y., Rainey, P., Baine, P., Montgomery, J., McNeill, D., Mitchell, N., Gamble, H. & Armstrong, M., The effect of atmospheric oxygen plasma on buried oxide layer for low temeprature wafer bonding (2009), Materials Ireland Conference , Dec 2009, (pp0-0)

  20. McNeill, D., Low, Y., Tantraviwat, D., Rainey, P., Baine, P., Mitchell, N., Armstrong, M. & Gamble, H., Electronic characterisation of Ge MOSTs measured at low temperature (2009), Materials Ireland Conference , Dec 2009, (pp0-0)

  21. Tantraviwat, D., Rainey, P., Baine, P., McNeill, D., Mitchell, N., Armstrong, M. & Gamble, H., Carrier mobility variations in self-aligned germanium MOS transistors (2009), Materials Ireland Conference , Dec 2009, (pp0-0)

  22. Rainey, P., Low, Y., Hurley, R., Baine, P., McNeill, D., Mitchell, N., Gamble, H. & Armstrong, M., Hydrogen and helium implantation in germanium for layer transfer applications (2009), Materials Ireland Conference , Dec 2009, (pp0-0)

  23. Baine, P., Gamble, H., Armstrong, M., Mitchell, N., McNeill, D., Rainey, P., Low, Y., Low, Y. & Tantraviwat, D., Germanium MOS transistors on sapphire and alumina platforms (2009), IEEE International SOI Conference 2009 , Oct 2009, (pp59-60)

  24. Baine, P., Gamble, H., Armstrong, M., Mitchell, N., McNeill, D., Rainey, P., Low, Y., Low, Y. & Tantraviwat, D., Low temperature measurement of TFTs fabricated on germanium-on-sapphire substrates (2009), ESSDERC 2009 , Sep 2009, (pp0-0)

  25. Liao, S., Bain, M., Baine, P., McNeill, D., Armstrong, M. & Gamble, H., Optimisation of tungsten disilicide dopant diffusion conduits for SSOI applications (2009), Proceedings of EuroSOI 2009 , Jan 2009, (pp83-84)

  26. Baine, P., Gamble, H., Armstrong, M., Mitchell, N., McNeill, D., Rainey, P., Low, Y., Low, Y. & Tantraviwat, D., Low temperature processes for manufacture of germanium MOS transistors (2009), Proceedings of EuroSOI 2009 , Jan 2009, (pp143-144)

  27. Armstrong, M., Gamble, H., Mitchell, N., McNeill, D., Ruddell, F., Montgomery, J., Baine, P., Low, Y. & Rainey, P., Germanium on Sapphire Substrates for System-on-a-Chip (2008), EMRS 2008 Symposium J (Beyond Silicon Technology: Materials and Devices for Post-Si CMOS) , May 2008, (pp1-1)

  28. Armstrong, M., Gamble, H., Bain, M., Baine, P. & McNeill, D., Conduit diffusion of dopants in tungsten silicide layers (2008), Proc IEEE Conference on Microelectronic Test Structures , Mar 2008, (pp65-70)

  29. Baine, P., Gamble, H., Armstrong, M., McNeill, D. & Mitchell, N., Germanium on Sapphire By Wafer Bonding (2008), EuroSOI 2008 , Jan 2008

  30. Kailath, B., Bhattacharya, S., DasGupta, A., DasGupta, N., McNeill, D. & Gamble, H., Effect of nitridation on Al/HfO2/Ge MIS capacitors (2007), Proceedings of 14th International Workshop on the Physics of Semiconductor Devices , Dec 2007, (pp194-197)

  31. Armstrong, M., Baine, P., Gamble, H., McNeill, D., Mitchell, N., Rainey, P., Ruddell, F. & Wadsworth, H., Germanium on Sapphire (2007), Proc Advanced Workshop on Frontiers in Electronics (WOFE 2007) , Dec 2007, (pp0-0)

  32. Armstrong, M., Baine, P., Gamble, H., McNeill, D. & Suder, S., Integration of ultrathin SOI using ion split and etch back processes (2007), Proc. EUROSOI 2007 Workshop of the Thematic Network on Silicon on Insulator technology, devices & circuits , Jan 2007, (pp19-20)

  33. Armstrong, M., Baine, P., Gamble, H., McNeill, D. & Suder, S., Deposition and Characterization of Strained SiGe Layer as an Etch Stop Layer in Ultrathin SOI Integration (2006), 210th Electrochem Soc Meeting, Symp on SiGe: & Ge Materials, Processing, & Devices , Oct 2006, (pp531-537)

  34. Armstrong, M., Gamble, H., McNeill, D., Ruddell, F. & Wadsworth, H., Germanium MOS Capacitors with Hafnium Dioxide and Silicon Dioxide Dielectrics (2006), E-MRS Spring Meeting 2006 Symp T (Germanium based semiconductors from materials to devices) , May 2006, (pp0-0)

  35. Armstrong, M., Ruddell, F., Wadsworth, H., Gamble, H. & McNeill, D., Buried Dielectrics for GeOI (2006), Proc. EUROSOI 2006 Workshop of the Thematic Network on Silicon on Insulator technology, devices & circuits , Mar 2006, (pp43-44)

  36. Bain, M., Baine, P., McNeill, D., Srinivasan, G., Jankovic, N., McCartney, J., Moore, R., Armstrong, M. & Gamble, H., Fabrication and characterisation of silicon on insulator substrates incorporating thermal vias (2005), NATO Advanced Research Workshop: Science and Technology of Semiconductor-On-Insulator structures devices operating in a harsh environment , Apr 2005, (pp103-108)

  37. Bain, M., Stefanos, S., Baine, P., Loh, S., Jin, L., Montgomery, J., Armstrong, M., Gamble, H., Hamel, J., McNeill, D., Kraft, A. & Kemhadjian, H., Silicon-on-insulator substrates with buried ground, planes (GPSOI) (2005), NATO Advanced Research Workshop on Science and Technology of Semiconductor-on-Insulator Structures and Devices Operating in a Harsh Environment , Apr 2005, (pp273-278)

  38. Armstrong, M., Bain, M., Baine, P., Gamble, H., McNeill, D. & Montgomery, J., Cross-talk suppression in SOI substrates (2005), EUROSOI 2005 First Workshop of the Thematic Network on Silicon on Insulator technology, devices & circuits , Jan 2005, (pp0-0)

  39. Toh, B., Bien, D., McNeill, D. & Gamble, H., Characterisation of copper inductors fabricated on low-k SOG dielectric layers and low resistivity silicon wafers by electroplating techniques (2004), 28th Annual Microscopical Society of Ireland (MSI) Meeting , Sep 2004, (pp0-0)

  40. Armstrong, M., Bain, M., Baine, P., Gamble, H., McNeill, D. & Montgomery, J., Silicon-on-Insulator Substrates with Buried Ground Planes (GPSOI) (2004), NATO Advanced Research Workshop: Science & Technology of Semiconductor-On-Insulator structures devices operating in a harsh environment , Apr 2004, (pp0-0)

  41. Armstrong, M., Bain, M., Baine, P., Gamble, H. & McNeill, D., Electrical characterisation of SOI substrates incorporating WSix ground planes (2004), NATO Advanced Research Workshop: Science & Technology of Semiconductor-On-Insulator structures devices operating in a harsh environment , Apr 2004, (pp0-0)

  42. Armstrong, M., Bain, M., Baine, P., Gamble, H. & McNeill, D., Manufacturing processes for WSi2-GPSOI substrates and their influence on cross-talk suppression and inductance (2003), Electrochemical Society Proc, v 19, Semiconductor Wafer Bonding VII: Science, Technology, & Applications , Sep 2003

  43. Baine, P., Gamble, H., Armstrong, M., Bain, M., McNeill, D., Hamel, J., Stefanos, S. & Kraft, M., Manufacturing processes for WSi2-GPSOI substrates and their influence on cross-talk suppression and inductance (2003), 7th International Symposium on Semiconductor Wafer Bonding , Apr 2003

  44. Baine, P., Gamble, H., Armstrong, M., McNeill, D., Bain, M., Hamel, J. & Kraft, M., Manufacture processes for GPSOI substrates and their influence on cross-talk suppression (2003), Electrochemical Society Proc, Semiconductor Wafer Bonding VII, Science Technology and Applications - Proc of the Intl Symposium , Apr 2003, (pp57-63)

  45. Gamble, H., Armstrong, M., Baine, P., Bain, M. & McNeill, D., Silicon-on-insulator substrates with buried tungsten silicide layer (2001), European Meeting on Silicon-on-Insulator Devices (EUROSOI-2000) , Oct 2001

  46. Toh, B., McNeill, D. & Gamble, H., Effects of copper grain structure on electromigration behaviour (2001), Proceedings of 9th International Symposium on Integrated Circuits, Devices & Systems , Sep 2001, (pp39-42)

  47. Suder, S., Hurley, R., Bain, M., Baine, P., McNeill, D., Armstrong, M. & Gamble, H., Fabrication of SOI substrates with buried tungsten silicide layer by smart-cut technique (2001), Proceedings of 9th International Symposium on Integrated Circuits, Devices & Systems, ISIC-2001 , Sep 2001, (pp279-282)

  48. Bhattacharya, S., Suder, S., Baine, P., McNeill, D., Uppal, S., Armstrong, A., Armstrong, M. & Gamble, H., Ultra-thin BESOI fabrication techniques (2000), Proceedings of International Conference on Communications, Computers & Devices, ICCCD-2000 , Dec 2000, (pp227-230)

  49. Toh, B., Len, V., McNeill, D. & Gamble, H., Characterisation of copper CVD films deposited using a Cu(I)(hfac)TMVS precursor (2000), Proceedings of International Conference on Communications, Computers & Devices, ICCCD-2000 , Dec 2000, (pp253-256)

  50. Bera, L., Choi, W., McNeill, D., Ray, S., Chatterjee, S. & Maiti, C., Structural and electrical characterizations of oxynitride films on solid phase epitaxially grown silicon carbide (2000), MRS Symposium Proceedings , Nov 2000, (ppH5.14.1-H5.14.6)

  51. McCusker, N., Len, V., Toh, B., McNeill, D. & Gamble, H., A comparative study into surface electromigration of sputtered copper patterned using lift-off and CMP (2000), Proceedings of 3rd International Conference on Materials for Microelectronics , Oct 2000, (pp93-96)

  52. Len, V., Toh, B., McNeill, D. & Gamble, H., Characterisation of copper CVD films deposited using copper (I) hexafluoroacetylacetonate trimethylvinylsilane - effects of water vapour and post annealing (2000), Proceedings of 3rd International Conference on Materials for Microelectronics , Oct 2000, (pp243-246)

  53. Len, V., McNeill, D. & Gamble, H., An evaluation of the effects of benzotriazole in NH4OH slurry for copper CMP (2000), MRS Symposium Proceedings , Apr 2000, (ppE7.4.1-E7.4.6)

  54. Uppal, S., Gay, D., Armstrong, A., McNeill, D., Baine, P., Armstrong, M., Gamble, H. & Yallup, K., Characterisation of SOI thin film transistors fabricated using SiGe etch stop layers (1999), Proceedings of 195th ECS Meeting and 9th International Symposium on Silicon-on-Insulator Technology & Devices , May 1999, (pp219-224)

  55. Uppal, S., Gay, D., Armstrong, A., McNeill, D., Baine, P., Armstrong, M., Gamble, H. & Yallop, K., Investigation of p-type contamination in thin SOI layers during fabrication (1999), MRS '99 Spring Meeting , Apr 1999, (pp0-0)

  56. McCusker, N., Len, V., McNeill, D., Armstrong, M. & Gamble, H., Electromigration in copper interconnects (1998), EMRS '98 Spring Meeting , Jun 1998, (pp0-0)

  57. McNeill, D., Gay, D., Li, X., Armstrong, M. & Gamble, H., Low temperature epitaxy of Si/Si1-xGex/Si multi-layers by low pressure RTCVD for very thin SOI applications (1998), MRS Symposium Proceedings , Apr 1998, (pp307-313)

  58. Li, X., Gay, D., McNeill, D., Armstrong, M. & Gamble, H., BESOI using a silicon germanium etch stop (1997), Proceedings of 192nd ECS Meeting, Semiconductor Wafer Bonding: Science, Technology & Applications IV , Sep 1997, (pp313-320)

  59. Baine, P., Gay, D., Quinn, L., Lee, B., Mitchell, N., McNeill, D., Armstrong, M. & Gamble, H., Single crystal silicon on glass substrates (1997), Workshop on NOvel Silicon on Insulator Materials & Applications , Apr 1997, (pp0-0)

  60. Campbell, P., Walmsley, D., Gay, D., Chong, R., Gamble, H. & McNeill, D., The effects of deposition conditions on micro-structure in polycrystalline silicon-germanium thin films: fractal characterisation using scanning probe microscopy (1996), IOP Condensed Matter & Materials Physics Conference , Dec 1996, (pp0-0)

  61. McNeill, D., Armstrong, M. & Gamble, H., Growth of multi-layer Si/Si1-xGex structures using rapid thermal chemical vapour deposition (1993), MRS Symposium Proceedings , Dec 1993, (pp187-192)

  62. Ye, L., McNeill, D., Montgomery, J., Raza, S., Armstrong, M. & Gamble, H., Rapid thermal epitaxial growth for static induction thyristors (1991), MADEP Symposium on Materials and Devices for Power Electronics , Sep 1991, (ppO-025-O-029)

  63. McNeill, D., Gamble, H. & Armstrong, M., Low temperature epitaxial silicon growth in a rapid thermal processor (1991), MRS Symposium Proceedings , May 1991, (pp235-240)

  64. Ruddell, F., McNeill, D., Armstrong, M. & Gamble, H., Silicon carbide layers produced by rapid thermal CVD (1990), Proceedings of SPIE , Oct 1990, (pp159-170)

  65. Ruddell, F., McNeill, D., Armstrong, M. & Gamble, H., The application of limited reaction processing to the deposition of silicon carbide layers (1990), Proceedings of 20th European Solid State Device Research Conference, ESSDERC '90 , Sep 1990, (pp357-360)

  66. Grant, L., McNeill, D. & Blomley, P., Rapid thermal processing of polysilicon emitter bipolar transistors in a combined CMOS/bipolar process (1987), Proceedings of 17th European Solid State Device Research Conference, ESSDERC '87 , Sep 1987, (pp207-209)


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