CVD Processing:

 

Batch reactor up to (25 substrates)

Thermal oxidation (wet and dry)

Low temperature CVD oxide deposition from TEOS precursor (720^OC)

LPCVD silicon nitride (800^OC) Si₃N₄

LPCVD polycrystalline silicon and amorphous silicon.

 

Single substrate reactor

Oxford Instruments PECVD Si₃N_4, SiO₂, ALD HfO₂ and Al₂O₃

Silox Low temperature atmospheric CVD SiO₂

Varian reactor CVD tungsten