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Chemical Vapour Deposition

CVD Processing:


Batch reactor up to (25 substrates)

Thermal oxidation (wet and dry)

Low temperature CVD oxide deposition from TEOS precursor (720OC)

LPCVD silicon nitride (800OC) Si3N4

LPCVD polycrystalline silicon and amorphous silicon.


Single substrate reactor

Oxford Instruments PECVD Si3N4, SiO2, ALD HfO2 and Al2O3

Silox Low temperature atmospheric CVD SiO2

Varian reactor CVD tungsten