CVD Processing:
Batch reactor up to (25 substrates)
Thermal oxidation (wet and dry)
Low temperature CVD oxide deposition from TEOS precursor (720OC)
LPCVD silicon nitride (800OC) Si3N4
LPCVD polycrystalline silicon and amorphous silicon.
Single substrate reactor
Oxford Instruments PECVD Si3N4, SiO2, ALD HfO2 and Al2O3
Silox Low temperature atmospheric CVD SiO2
Varian reactor CVD tungsten