Ferroelectric domain wall memristors as artificial synapses

Human brain performs pattern recognition tasks more energy efficiently than supercomputers, which are based on Turing/Von Neumann architecture that requires extensive communication between memory and processor. In the brain, information is simultaneously stored and processed at synaptic connections meaning that memory and processor coexist in the same location. This mechanism has entitled as in-memory or neuromorphic computing. Ferroelectric domain walls, which are two-dimensional topological defects formed at the interfaces between differently polarised domains, can exhibit tunable conductivity, memory and displacement properties, which biological synapses have.

My research is focused on the development of ferroelectric domain wall based memristors as artificial synapses, demonstration of synaptic functionality of the walls and their neuromorphic hardware integration.

Biography

I have received my Bachelor's degree in Electronics and Communication Engineering, and my Master’s degree in Electronics Engineering from Istanbul Technical University, Turkey in 2017 and in 2020 respectively. I have been research and teaching assistant in the department of Electronics and Communication Engineering, Istanbul Technical University between 2018 and 2020. I started my PhD as H2020 ITN MANIC Marie Curie research fellow in the School of Mathematics and Physics in September 2020.

Research interests

• Ferroelectric domain wall memristors
• Neuromorphic materials
• Neuromorphic computing
• Scanning probe microscopy

PURE Page